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HANBit
HAN BIT
HMS51232M4V/Z4V
SRAM MODULE 2Mbyte (512K x 32-Bit), 3.3V Part No.
HMS51232M4V, HMS51232Z4V
GENERAL DESCRIPTION
The HMS51232M4V/Z4V is a high-speed static random access memory (SRAM) module containing 524,288 words organized in a x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 72-pin, single-sided, FR4-printed circuit board. PD0 to PD3 identify the module's density allowing interchangeable use of alternate density, industry- standard modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module's 4 bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from a single +3.3V DC power supply and all inputs and outputs are fully LVTTL-compatible.
FEATURES
Access times : 10, 12 and 15ns High-density 2Mbyte design High-reliability, high-speed design Single + 3.3V 0.3V power supply Easy memory expansion /CE and /OE functions All inputs and outputs are LVTTL-compatible Industry-standard pinout FR4-PCB design Part Identification
- HMS51232M4V: SIMM design - HMS51232Z4V: ZIP design Pin-compatible with the HMS51232M4V
NC NC PD2 PD3 Vss PD0 PD1 DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 Vcc A0 A7 A1 A8 A2 A9 DQ12 DQ4 DQ13 DQ5 DQ14 DQ6 DQ15 DQ7 Vss /WE A15 A14 /CE2 /CE1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
PIN ASSIGNMENT
/CE4 /CE3 A17 A16 /OE Vss DQ24 DQ16 DQ25 DQ17 DQ26 DQ18 DQ27 DQ19 A3 A10 A4 A11 A5 A12 Vcc A13 A6 DQ20 DQ28 DQ21 DQ29 DQ22 DQ30 DQ23 DQ31 Vss A18 NC NC NC 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72
OPTIONS
Timing
10ns access
MARKING
-10
12ns access
15ns access
-12
-15 M Z
Packages
72-pin SIMM 72-pin ZIP
72-Pin SIMM
TOP VIEW
PD0 = Open PD1 = Open PD2 = Open PD3 = Vss
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HANBit FUNCTIONAL BLOCK DIAGRAM
32 DQ0 - DQ31 A0 - A18 19 A0-18 DQ 0-7 /WE /OE
HMS51232M4V/Z4V
U1
/CE
/CE1 A0-18 DQ 8-15 /WE /OE
U2
/CE
/CE2 A0-18 DQ16-23 /WE /OE
U3
/CE
/CE3 A0-18 DQ24-31 /WE /OE /WE /OE
U4
/CE PD0 = Open PD1 = Open PD2 = Open PD3 = Vss DQ HIGH-Z HIGH-Z Dout Din POWER STANDBY ACTIVE ACTIVE ACTIVE
/CE4
TRUTH TABLE
MODE STANDBY NOT SELECTED READ WRITE /OE X H L X /CE H L L L /WE X H H L
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HANBit ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Power Dissipation Storage Temperature SYMBOL VIN,OUT VCC PD TSTG
HMS51232M4V/Z4V
RATING -0.5V to +4.6V -0.5V to +4.6V 4W -65oC to +150oC
Operating Temperature TA 0oC to +70oC Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER Supply Voltage Ground Input High Voltage Input Low Voltage * SYMBOL VCC VSS VIH VIL MIN 3.0V 0 2.0 -0.5*
( TA=0 to 70 o C ) TYP. 3.3V 0 MAX 3.6V 0 Vcc+0.3V** 0.8V
VIL(Min.) = -2.0V (Pulse Width 10ns) for I 20 mA
** VIH(Min.) = Vcc+2.0V (Pulse Width 10ns) for I 20 mA
DC AND OPERATING CHARACTERISTICS (1)
(0oC TA 70 oC ; Vcc = 3.3V 0.3V, Unless otherwise specified) PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage * Vcc=3.3V, Temp=25 oC TEST CONDITIONS VIN = Vss to Vcc /CE=VIH or /OE =VIH or /WE=VIL VOUT=Vss to VCC IOH = -4.0mA IOL = 8.0mA SYMBO L ILI IL0 VOH VOL MIN -2 -2 2.4 0.4 MAX 2 2 UNITS A A V V
DC AND OPERATING CHARACTERISTICS (2)
MAX DESCRIPTION Power Supply Current:Operating Power Supply Current:Standby TEST CONDITIONS Min. Cycle, 100% Duty /CE=VIL, VIN=VIH or VIL, IOUT=0mA Min. Cycle, /CE=VIH f=0MHZ, /CEVCC-0.2V, VIN VCC-0.2V or VIN0.2V SYMBOL lCC lSB lSB1 -10 205 50 10 -12 200 50 10 -15 195 50 10 UNIT mA mA mA
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HANBit CAPACITANCE
DESCRIPTION Input /Output Capacitance Input Capacitance TEST CONDITIONS VI/O=0V VIN=0V SYMBOL CI/O CIN
HMS51232M4V/Z4V
MAX 8 7
UNIT pF pF
* NOTE : Capacitance is sampled and not 100% tested
AC CHARACTERISTICS (0oC TA 70 oC ; Vcc = 3.3V 0.3V, unless otherwise specified)
TEST CONDITIONS PARAMETER Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load VALUE 0 to 3V 3ns 1.5V See below
Output Load (A) VL=1.5V 50 DOUT Z0=50 30pF DOUT 353
Output Load (B) for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ +3.3V 319 5pF*
READ CYCLE
-10 PARAMETER Read Cycle Time Address Access Time Chip Select to Output Output Enable to Output Chip Enable to Low-Z Output Output Enable to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output
SYMBOL MIN MAX MIN MAX MIN MAX
-12
-15
UNIT
tRC tAA tCO tOE tLZ tOLZ tHZ tOHZ
10 3 0 0 0
10 10 5 5 5
12 3 0 0 0
12 12 6 6 6
15 3 0 0 0
15 15 7 7 7
ns ns ns ns ns ns ns ns
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HANBit
Output Hold from Address Change Chip Select to Power Up Time Chip Select to Power Down Time tOH tPU tPD 3 0 15 3 0 -
HMS51232M4V/Z4V
12 3 0 15 ns ns ns
WRITE CYCLE
-10 PARAMETER Write Cycle Time Chip Select to End of Write Address Set-up Time Address Valid to End of Write Write Pulse Width (/OE High) Write Pulse Width (/OE Low) Write Recovery Time Write to Output High-Z Data to Write Time Overlap Data Hold from Write Time End of Write to Output Low-Z
SYMBOL MIN MAX MIN MAX MIN MAX
-12
-15
UNIT
tWC tCW tAS tAW tWP tWP1 tWR tWHZ tDW tDH tOW
10 7 0 7 7 10 0 0 5 0 3
5 -
12 8 0 8 8 12 0 0 6 0 3
6 -
10 10 0 10 10 15 0 0 7 0 3
7 -
ns ns ns ns ns ns ns ns ns ns ns
TIMING DIAGRAMS
See Part No. HMS51232M4/Z4
FUNCTIONAL DESCRIPTION
/CE H L L L /WE X* H H L /OE X H L X MODE Not Select Output Disable Read Write I/O PIN High-Z High-Z DOUT DIN SUPPLY CURRENT I SB, I SB1 ICC ICC ICC
Note: X means Don't Care
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HANBit PACKAGING INFORMATION
SIMM Design
108.20 mm 3.18 mm TYP(2x)
HMS51232M4V/Z4V
16 mm 6.35 mm
1
72
2.03 mm 1.02 mm 6.35 mm 95.25 mm 1.27 mm 3.34 mm
0.25 mm MAX
2.54 mm MIN
1.290.08mm
Gold: 1.040.10 mm 1.27 Solder: 0.9140.10 mm
(Solder & Gold Plating Lead)
ZIP Design
96.5 mm CUT 1.5 mm
19 mm 1 6 mm 72
2.54 mm 1 mm 97.79 mm
46 mm
1 mm
1.290.08 mm
2.54
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HANBit Electronics Co.,Ltd.
HANBit
HMS51232M4V/Z4V
ORDERING INFORMATION
1
2
3
4
5
6
78
9
HMS
HANBit Memory Modules SRAM
512 32 M 4 V -15
3.3V
15ns Access Time
Component SIMM x32bit 512K
1. - Product Line Identifier HANBit ------------------------------------------------------- H 2. - Memory Modules 3. - SRAM 4. - Depth : 512K 5. - Width : x 32bit 6. - Package Code SIMM ------------------------------------------------------- M ZIP ------------------------------------------------------- Z 7. - Number of Memory Components 8. - V : 3.3V 9. - Access time 10 ----------------------------------------------------------- 10ns 12 ----------------------------------------------------------- 12ns 15 ----------------------------------------------------------- 15ns 17 ----------------------------------------------------------- 17ns 20 ----------------------------------------------------------- 20ns
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